图1 p-n结基本结构Chapter 6 p-n Junctions（p-n结）5.1 Fabrication Of p-n Junction1. Alloyed Junctions (合金结)2. Diffused Junctions (扩散结) 3. Ion Implantation (离子注入) 4. Epitaxial Growth (外延生长)合金温度降温再结晶1. Alloyed Junctions (合金结)2. Diffused Junctions (扩散结)n Conceptual example of the use of photolithography to form a pn junction diode.扩散 扩散系统 系统 3. Ion Implantation (离子注入)分子束外延(MBE)超高真空化学气相沉积(UHV/CVD)常压及减压外延(ATM & RP Epi) 外延(简称Epi)工艺是指在单晶衬底上生长一层跟衬底具有相同晶格排列的单晶材料 4. Epitaxial Growth (外延生长)方法：缓变结与突变结5.2 Equilibrium
