宽禁带半导体功率器件刘海涛陈启秀摘要阐述了宽禁带半导体的主要特性与SiC、金刚石等主要宽禁带半导体功率器件的最新发展动态及其存在的主要问题，并对其未来的发展作出展望。关键词宽禁带半导体功率器件碳化硅金刚石Wide Bandgap Semiconductor Power DevicesLiu Haitao,Chen Qixiu(Institute of Power Devices,Zhejiang University,Hangzhou 310027)AbstractThe paper presents the main characteristics of wide bandgap semiconductors,and elaborates the latest development of SiC and diamond power devices.At the same time,the future development of SiC and diamond power devices is forcasted.Keyw
