精选优质文档-倾情为你奉上A Model of MOSFETs Second Breakdown Action in Circuit-LevelCUI Qiang1，HAN Yan1，LIU Jun-jie1,2，DONG Shu-rong1，SI Rui-jun11. Institute of Microelectronics and Photoelectronics, Zhejiang University, Hangzhou , China2. Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL 32816 USAAbstract: A method to exact the electrical parameters and model the second breakdown action of MOSFETs under ESD （Electro-Static Discharge） on circuit-le
